Circuit Synthesis of a 140–220 GHz Low-Noise Amplifier in 130 nm SiGe BiCMOS

David Bierbuesse, F. Dietrich, Eduard Heidebrecht, R. Negra
{"title":"Circuit Synthesis of a 140–220 GHz Low-Noise Amplifier in 130 nm SiGe BiCMOS","authors":"David Bierbuesse, F. Dietrich, Eduard Heidebrecht, R. Negra","doi":"10.1109/SMACD58065.2023.10192183","DOIUrl":null,"url":null,"abstract":"The synthesis of a broadband LNA operating at THz-frequencies is presented. The overall synthesis time does not exceed 2.5 hours. To the best of the author’s knowledge, this work presents the first ever published synthesis of a THz LNA circuit. The synthesized LNA provides more than 15 dB gain over a frequency range from 140–220 GHz with a 3dB-bandwidth of 70 GHz from 150–220 GHz. The minimum noise figure is 8.2 dB and a maximum P1dB of −1.5 dBm can be achieved in simulation.","PeriodicalId":239306,"journal":{"name":"2023 19th International Conference on Synthesis, Modeling, Analysis and Simulation Methods and Applications to Circuit Design (SMACD)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2023-07-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2023 19th International Conference on Synthesis, Modeling, Analysis and Simulation Methods and Applications to Circuit Design (SMACD)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SMACD58065.2023.10192183","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
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Abstract

The synthesis of a broadband LNA operating at THz-frequencies is presented. The overall synthesis time does not exceed 2.5 hours. To the best of the author’s knowledge, this work presents the first ever published synthesis of a THz LNA circuit. The synthesized LNA provides more than 15 dB gain over a frequency range from 140–220 GHz with a 3dB-bandwidth of 70 GHz from 150–220 GHz. The minimum noise figure is 8.2 dB and a maximum P1dB of −1.5 dBm can be achieved in simulation.
130 nm SiGe BiCMOS中140-220 GHz低噪声放大器的电路合成
介绍了一种工作在太赫兹频率的宽带LNA的合成。总合成时间不超过2.5小时。据作者所知,这项工作首次发表了太赫兹LNA电路的合成。该合成LNA在140-220 GHz频率范围内提供超过15 dB的增益,在150-220 GHz频率范围内提供70 GHz的3db带宽。在仿真中,最小噪声系数为8.2 dB,最大P1dB为- 1.5 dBm。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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