Study of the Optical, Electrical, Structural and Morphological Properties of Electrodeposited Lead Manganese Sulphide (PbMnS) Thin Film Semiconductors for Possible Device Applications

Augustine Nwode Nwori, Nnaedozie Laz Ezenwaka, Ifenyinwa Euphemia Ottih, N. Okereke, N. L. Okoli
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Abstract

Semiconductor thin films of lead manganese sulphide (PbMnS) have been successfully deposited on florinated tin oxide (FTO) conductive glass substrate using an electrodeposition method. Lead acetate (Pb(CH3COO)2), manganese sulphate (MnSO4.H2O) and thiourea (CH4N2S) were the precursor used for cadmium (Cd2+), manganese (Mn2+) and sulphur (S2-) sources respectively. The concentration of manganese (Mn2+) was varied while keeping the concentrations of Pb2+ and S2- constant at 0.2 M and 0.1 M respectively. The deposited films were annealed at temperature of 250 oC and subjected for optical, electrical, structural and morphological characterizations. The results of the characterizations showed that the deposited thin films of PbMnS have high absorbance, high absorption coefficient throughout VIS and NIR regions. The band gap energy of the films is tuned to the order of 1.9 eV to 2.0 eV and tends to constant as concentration of Mn2+ increased. The electrical properties (electrical resistivity and conductivity) of the films are dependent on the concentration of Mn2+ and film thickness. The range of values of the electrical properties is found to be within the range of values for semiconductor materials. The XRD analysis revealed that the deposited thin films of PbMnS is crystalline but the crystallinity declined with increase in concentration of Mn2+. The SEM morphology showed that the surfaces of the films are highly homogeneous in nature and particle sizes are uniform on the substrate with the majority of the particles been spherical in shape. These observed properties exhibited by the deposited thin films of PbMnS make the films good materials for many optoelectronic and electronic applications such as solar cell, light emitting diode (LED), photodetector etc.
电沉积硫化铅锰薄膜半导体的光学、电学、结构和形态学研究
采用电沉积方法成功地在氟化氧化锡(FTO)导电玻璃衬底上沉积了硫化铅锰半导体薄膜。乙酸铅(Pb(CH3COO)2)、硫酸锰(MnSO4.H2O)和硫脲(CH4N2S)分别作为镉(Cd2+)、锰(Mn2+)和硫(S2-)源的前驱体。当Pb2+和S2-的浓度分别为0.2 M和0.1 M时,锰(Mn2+)的浓度发生了变化。制备的薄膜在250℃下退火,并进行光学、电学、结构和形态表征。表征结果表明,所制备的pbmn薄膜在可见光区和近红外区具有较高的吸光度和吸收系数。薄膜的带隙能量在1.9 ~ 2.0 eV之间,并随着Mn2+浓度的增加趋于稳定。薄膜的电性能(电阻率和导电性)取决于Mn2+的浓度和薄膜厚度。电性能的取值范围在半导体材料的取值范围内。XRD分析表明,沉积的PbMnS薄膜呈结晶状,但结晶度随Mn2+浓度的增加而下降。SEM形貌分析表明,薄膜表面高度均匀,基底上的颗粒尺寸均匀,大部分颗粒呈球形。这些特性使得PbMnS薄膜在太阳能电池、发光二极管(LED)、光电探测器等光电领域具有良好的应用前景。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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