Recent Advances in InP DHBT Manufacturing Technology

Abstract

A second-generation 0.5 mum InP double heterojunction bipolar transistor (DHBT) technology has been developed with outstanding manufacturability and scalability for advanced RF and mixed-signal integrated-circuit applications. It incorporates self-aligned refractory-metal-based ohmic contacts, ledge passivation for both the EB and BC junctions, and a mature interconnect process. Through process and epi-structure optimization, recent experimental high-speed devices yielded over 400 GHz fT and 450 GHz fmax, and separately, high-power devices yielded BVCEO over 20 V with knee voltage under 0.5 V