Monolithic InGaAs/InGaAsP electro-absorption intensity modulator fabricated using low energy arsenic ion implantation induced intermixing

2000 Digest of the LEOS Summer Topical Meetings. Electronic-Enhanced Optics. Optical Sensing in Semiconductor Manufacturing. Electro-Optics in Space. Broadband Optical Networks (Cat. No.00TH8497) Pub Date : 2000-07-24 DOI:10.1109/LEOSST.2000.869676

S. L. Ng, H.S. Lim, B. Ooi, Y. Lam, Y. Zhou, Y. Chan, V. Aimez, J. Beauvais, J. Beerens

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Abstract

10-channel monolithic multiple wavelength electro-absorption (EA) modulators have been fabricated onto a single chip using a one-step quantum well intermixing technique based on As/sup 2+/ ion implantation through a graded thickness silicon dioxide mask. Each individual modulator has a dimension of 400/spl times/500 /spl mu/m/sup 2/, 50 /spl mu/m width of active window, 500 /spl mu/m cavity length and 20 /spl mu/m width of isolation trench. The EA intensity modulators were characterized at room temperature using end-fire-coupling technique. Samples used in this study had a InGaAs/InGaAsP MQW (five quantum wells) laser structure grown by metal-organic vapor phase epitaxy and were of the form of a stepped graded index heterostructure.

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低能砷离子注入诱导混合制备InGaAs/InGaAsP单片电吸收强度调制器

采用基于As/sup +/离子注入的一步量子阱混合技术，通过渐变厚度的二氧化硅掩膜将10通道单片多波长电吸收(EA)调制器制作到单芯片上。每个单独的调制器的尺寸为400/spl倍/500 /spl亩/米/sup 2/，活动窗宽度为50 /spl亩/米，空腔长度为500 /spl亩/米，隔离沟宽度为20 /spl亩/米。利用端火耦合技术在室温下对EA强度调制器进行了表征。本研究样品采用金属-有机气相外延生长的InGaAs/InGaAsP MQW(五量子阱)激光结构，为阶梯渐变指数异质结构。

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2000 Digest of the LEOS Summer Topical Meetings. Electronic-Enhanced Optics. Optical Sensing in Semiconductor Manufacturing. Electro-Optics in Space. Broadband Optical Networks (Cat. No.00TH8497)

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