High performance Si3N4 waveguide devices platform

X. Tu, Junfeng Song, Xianshu Luo, T. Liow, Mingbin Yu, G. Lo
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Abstract

Si3N4 strip and slot waveguide passive devices platform are demonstrated based on standard CMOS process including athermal MZI filter, multi-channel ring filter, two-ring EIT and AWG. The loss of Si3N4 strip waveguide is 0.6dB/cm for TE mode and 0.66dB/cm for TM mode. A 20-channel micro-ring filter with 25GHz channel spacing is realized with 15dB cross-talk on this Si3N4 platform. Thermal tuning EIT is demonstrated with two-ring filter structure with heater on one of the ring resonator. A 16-channel AWG is realized with a 100GHz channel spacing and 15 dB extinction ratio.
高性能Si3N4波导器件平台
基于非热MZI滤波器、多通道环形滤波器、双环EIT和AWG等标准CMOS工艺,展示了Si3N4带波导和槽波导无源器件平台。TE模式下Si3N4波导损耗为0.6dB/cm, TM模式下损耗为0.66dB/cm。在Si3N4平台上以15dB串扰实现了信道间隔为25GHz的20路微环滤波器。在环形谐振器的一个上装有加热器的双环滤波器结构演示了热调谐EIT。采用100GHz通道间距和15db消光比实现了16通道AWG。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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