Quick on-chip self- and mutual-inductance screen

Shen Lin, N. Chang, Sam Nakagawa
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引用次数: 51

Abstract

In this paper, based on simulations of top-level interconnects and CMOS devices of industrial 0.18 /spl mu/m technology, the rules to screen out those inductive interconnects requiring more accurate RLC considerations, and the victim wires potentially having significant inductive noises are developed. The presented criteria constitute a tighter self-inductance screening rule than those found in previously published work. The 2/spl times/mutual inductance screening rule is presented and verified. The differences in on-chip inductance consideration, the significant frequency of a trapezoidal pulse, and the circuit modeling of on-chip inductance are also discussed.
快速片上自感和互感屏幕
本文通过对顶级互连和工业0.18 /spl mu/m工艺的CMOS器件的仿真,提出了需要更精确RLC考虑的感应互连和可能存在显著感应噪声的受害导线的筛选规则。提出的标准构成了一个更严格的自感筛选规则比那些发现在以前发表的工作。提出并验证了2/ sp1倍/互感筛选规则。此外,还讨论了片上电感考虑的差异、梯形脉冲的显著频率以及片上电感的电路建模。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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