Magnetic field enhanced robustness of quantized current plateaus in single and double quantum dot non-adiabatic single charge pumps

P. Mirovsky, C. Leicht, B. Kaestner, Vyacheslavs Kashcheyevs, K. Pierz, H. Schumacher
{"title":"Magnetic field enhanced robustness of quantized current plateaus in single and double quantum dot non-adiabatic single charge pumps","authors":"P. Mirovsky, C. Leicht, B. Kaestner, Vyacheslavs Kashcheyevs, K. Pierz, H. Schumacher","doi":"10.1109/CPEM.2010.5544459","DOIUrl":null,"url":null,"abstract":"We compare the robustness of the quantized current plateaus of semiconductor non-adiabatic quantized charge pumps consisting of a single quantum dot (SQD) and two QDs connected in series (DQD). For the SQD application of a perpendicular magnetic field leads to an enhanced robustness of the first current plateau I = ef, with f the pumping frequency and e the elementary charge. In contrast for the DQD a comparably enhanced robustness of the plateau I = 2ef is found. These findings might allow generation of higher currents without compromising quantization accuracy by optimizing the device geometry.","PeriodicalId":222495,"journal":{"name":"CPEM 2010","volume":"16 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-06-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"CPEM 2010","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CPEM.2010.5544459","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3

Abstract

We compare the robustness of the quantized current plateaus of semiconductor non-adiabatic quantized charge pumps consisting of a single quantum dot (SQD) and two QDs connected in series (DQD). For the SQD application of a perpendicular magnetic field leads to an enhanced robustness of the first current plateau I = ef, with f the pumping frequency and e the elementary charge. In contrast for the DQD a comparably enhanced robustness of the plateau I = 2ef is found. These findings might allow generation of higher currents without compromising quantization accuracy by optimizing the device geometry.
磁场增强单、双量子点非绝热单电荷泵中量子化电流平台的鲁棒性
我们比较了由单个量子点(SQD)和两个串联量子点(DQD)组成的半导体非绝热量子化电荷泵的量子化电流平台的鲁棒性。对于SQD,垂直磁场的应用导致第一电流平台I = ef的鲁棒性增强,其中f为泵浦频率,e为基本电荷。与DQD相反,发现平台I = 2ef的鲁棒性相对增强。这些发现可能允许通过优化器件几何形状来产生更高的电流,而不会影响量化精度。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信