{"title":"A Self-Oscillating Single Gatemesfet X-Bandmixer","authors":"A. E. Fusté, J. Busquets, E. de 1os Reyes Davo","doi":"10.1109/EUMA.1987.333777","DOIUrl":null,"url":null,"abstract":"The non1inear properties of GaAs MESFET can be used to implement self-oscillating mixers. This paper describes a new single-gate MESFET X-Band mixer of this kind built on a microstrip circuit, its design constraints and the results obtained.","PeriodicalId":208245,"journal":{"name":"1987 17th European Microwave Conference","volume":"83 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1987-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"1987 17th European Microwave Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EUMA.1987.333777","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
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Abstract
The non1inear properties of GaAs MESFET can be used to implement self-oscillating mixers. This paper describes a new single-gate MESFET X-Band mixer of this kind built on a microstrip circuit, its design constraints and the results obtained.
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