{"title":"Wideband common-gate low-noise amplifier with dual-feedback for simultaneous input and noise matching","authors":"R. Ye, T. Horng, Jian-Ming Wu","doi":"10.1109/RFIC.2011.5940667","DOIUrl":null,"url":null,"abstract":"This work designs and implements a wideband common-gate (CG) low-noise amplifier (LNA) with dual-feedback using 0.18 µm CMOS technology. The design is based on a mechanism of dual-feedback, which is composed of a transformer and a gm-boosting feedback, to overcome the trade-off between noise and input matching in common-gate topology without consuming additional dc power. Simultaneously, the noise figure and power gain are improved. The implemented wideband CG LNA achieves an S11 of below −10 dB, a NF of 1.9 – 2.65 dB, a power gain of 13.5 – 16.5 dB, and an IIP3 of −2 – 3 dBm, with a 3 dB gain bandwidth of 1 – 8 GHz; the chip consumes 10.8 mW.","PeriodicalId":448165,"journal":{"name":"2011 IEEE Radio Frequency Integrated Circuits Symposium","volume":"592 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2011-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"14","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2011 IEEE Radio Frequency Integrated Circuits Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RFIC.2011.5940667","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 14
Abstract
This work designs and implements a wideband common-gate (CG) low-noise amplifier (LNA) with dual-feedback using 0.18 µm CMOS technology. The design is based on a mechanism of dual-feedback, which is composed of a transformer and a gm-boosting feedback, to overcome the trade-off between noise and input matching in common-gate topology without consuming additional dc power. Simultaneously, the noise figure and power gain are improved. The implemented wideband CG LNA achieves an S11 of below −10 dB, a NF of 1.9 – 2.65 dB, a power gain of 13.5 – 16.5 dB, and an IIP3 of −2 – 3 dBm, with a 3 dB gain bandwidth of 1 – 8 GHz; the chip consumes 10.8 mW.