Design of a low VSWR harmonics, low loss SP6T switch for GSM/Edge applications.

Abstract

In this paper the design and measurement of a high performance SP6T GaAs pHEMT switch for Quad-Band GSM/EDGE Front-Ends are discussed. The design uses a novel approach to reduce the generated harmonic levels at 3 V supply, 35 dBm drive and antenna VSWR of 5:1 down to -40 dBm, the lowest levels for the multi-mode multi-throw switches reported to date. Besides low harmonic performance, low TX insertion loss of below 0.5 dB at 2 GHz and RX insertion loss of below 1 dB at 2 GHz is achieved.