Studies on gas sensing performance of pure and surface modified ZrO2 thick film resistor

S. Deshmukh, G. Jain, G. Patil, L. A. Patil
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引用次数: 3

Abstract

In this work, thick films of pure ZrO2 powder were prepared by screen printing technique. The material was characterized by XRD, SEM, EDAX and UV spectroscopy Techniques. X-Ray Diffraction studies confirmed that the combinations of tetragonal and monoclinic structure. The gas sensing performances of various gases were tested. The thick films showed highest response to NH3 (100 ppm) at 300°C. The film was modified by dipping in 0.1M CdCl2 solution for the time intervals of 5, 10, 20 and 30 minutes and surface morphology was observed by SEM technique. The sensitivity and selectivity to different gases was tested and first time it was investigated that the film showed highest response to H2S gas at operating temperature 300°C by dipping technique. The sensitivity and selectivity may be further enhanced by Cd doping. The quick response and fast recovery time was recorded.
纯ZrO2和表面改性ZrO2厚膜电阻器气敏性能研究
本文采用丝网印刷技术制备了纯ZrO2粉末的厚膜。采用XRD、SEM、EDAX和UV光谱对材料进行了表征。x射线衍射研究证实其为四方和单斜结构的组合。测试了各种气体的气敏性能。在300℃时,厚膜对NH3 (100 ppm)的响应最高。在0.1M的CdCl2溶液中分别浸泡5、10、20和30分钟,用扫描电镜观察膜的表面形貌。对不同气体的敏感性和选择性进行了测试,并首次研究了浸渍技术在工作温度300℃时对H2S气体的响应最高。镉的掺入可进一步提高灵敏度和选择性。反应速度快,恢复时间短。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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