Very low photo-CVD deposition rate process for high quality thin SiO/sub 2/ films

Abstract

Very low deposition rates, below 0.56 nm/min, of SiO/sub 2/ were investigated using photo-induced chemical vapor deposition (photo-CVD). These low deposition rates are adequate to grow very thin and ultra thin layers of SiO/sub 2/. Details on the design of the reaction chamber, reactive gases and process parameters to obtain the desired deposition regime are presented. Dependence of deposition rate on pressure in the chamber is discussed. Deposited layers were characterized using I-V and C-V techniques.