Integration of micro-contact enhanced thermoelectric cooler with a FEEDS manifold-microchannel system for cooling of high flux electronics

Sevket U. Yuruker, Daniel G. Bae, R. Mandel, Bao Yang, P. McCluskey, A. Bar-Cohen, M. Ohadi
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引用次数: 4

Abstract

Two-phase microchannel cooling has demonstrated substantial performance enhancement for thermal management of high-power electronics, offering remarkable heat removal capability without imposing high pumping power penalties. However, similar to other bulk cooling methods, this method alone too has difficulty in addressing remediation of local hotspots. Thermoelectric coolers, on the other hand, are scalable and perfectly suited for localized cooling. Thus in this paper, we report our work on integration of a micro-contact enhanced TEC with FEEDS (thin-Film Evaporation and Enhanced fluid Delivery System) manifold-micro channel system. Combining these two thermal management schemes into a single system can provide effective heat removal over the entire electronic chip surface. Integration of these two methods, however, poses several challenges, including hermetic sealing, wiring of the TEC, excessive joule heating in electrical traces, and thermal/electrical short-circuits. Thus, the aim of this study was to integrate an optimized, 3 mm × 0.8 mm TEC into a FEEDS manifold-microchannel system to create a reliable high flux cooling mechanism on a silicon or silicon carbide chip for cooling of 5kW/cm2 hotspot and 1kW/cm2 background heat fluxes. The manufacturing, integration configuration, and assembly of the system are discussed in this paper. A numerical model of the system is built and simulated using the commercial finite-element analysis software ANSYS. Preliminary numerical results demonstrated that with 30 °C temperature rise at the SiC chip's background surface, less than 35 °C hotspot temperature rise with respect to the coolant fluid temperature (110 °C) can be achieved.
集成微接触增强热电冷却器与FEEDS歧管微通道系统的高通量电子冷却
两相微通道冷却已经证明了高功率电子产品的热管理性能的显著增强,在不施加高泵浦功率损失的情况下提供了卓越的散热能力。然而,与其他整体冷却方法类似,这种方法本身也难以解决局部热点的修复问题。另一方面,热电冷却器是可扩展的,非常适合局部冷却。因此,在本文中,我们报告了我们在集成微接触增强TEC与FEEDS(薄膜蒸发和增强流体输送系统)歧管-微通道系统的工作。将这两种热管理方案结合到一个系统中可以在整个电子芯片表面提供有效的散热。然而,这两种方法的集成带来了一些挑战,包括密封性、TEC的布线、电迹线中过多的焦耳加热以及热/电短路。因此,本研究的目的是将优化的3 mm × 0.8 mm TEC集成到FEEDS管汇-微通道系统中,在硅或碳化硅芯片上创建可靠的高通量冷却机制,以冷却5kW/cm2的热点和1kW/cm2的背景热流。本文讨论了该系统的制造、集成配置和装配。利用商用有限元分析软件ANSYS建立了系统的数值模型并进行了仿真。初步数值结果表明,SiC芯片背景表面升温30℃时,相对于冷却液温度(110℃),热点温升可小于35℃。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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