A 6.25-GHz low DC power low-noise amplifier in SiGe

Proceedings of CICC 97 - Custom Integrated Circuits Conference Pub Date : 1997-05-05 DOI:10.1109/CICC.1997.606608

H. Ainspan, M. Soyuer, J. Plouchart, J. Burghartz

引用次数: 28

Abstract

A 6.25-GHz monolithic low-noise amplifier (LNA) with a minimum noise figure of 2.2 dB and an associated gain of 20.4 dB implemented in a standard SiGe bipolar technology is presented. The 50-ohm noise figure is 3.5 dB with S21 of 18.3 dB. The circuit dissipates 9.4 mW from a 2.5-V supply (6.4 mW in the gain stages). The LNA's figure of merit gain/(P/sub DC//spl times/NF) of 0.56 mW/sup -1/ exceeds those of recently published 5 to 6 GHz GaAs MESFET and HBT LNA's.

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6.25 ghz低直流功率低噪声SiGe放大器

提出了一种6.25 ghz单片低噪声放大器，其最小噪声系数为2.2 dB，相关增益为20.4 dB，采用标准SiGe双极技术实现。50欧姆噪声系数为3.5 dB, S21为18.3 dB。该电路从2.5 v电源消耗9.4 mW(增益级6.4 mW)。LNA的优点增益/(P/sub DC//spl times/NF)值为0.56 mW/sup -1/，超过了最近发布的5至6 GHz GaAs MESFET和HBT LNA。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Proceedings of CICC 97 - Custom Integrated Circuits Conference

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