Ultraviolet Photocodetector Based on MgxZn1-xO(0 ⩽ x ⩽ 0.36) Thin Films Deposited by RF Magnetron Sputtering

H. Lee, Ming-Yi Wang, Ching-Ting Lee
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Abstract

The MgxZn1-xO thin films for x varying from 0 to 0.36 were deposited by RF magnetron sputtering. The MgxZn1_xO films are characterized by X-ray diffraction and UV-visible spectroscopy. The MgxZn1-xO metal-semiconductor-metal ultraviolet photocodetectors (MSM-UPDs) were fabricated. We also investigated the electrical and optical properties of the MSM-UPDs.
基于射频磁控溅射沉积MgxZn1-xO(0≤x≤0.36)薄膜的紫外光探测器
采用射频磁控溅射法制备了x值为0 ~ 0.36的MgxZn1-xO薄膜。用x射线衍射和紫外可见光谱对MgxZn1_xO薄膜进行了表征。制备了MgxZn1-xO金属-半导体-金属紫外探测器(msm - upd)。我们还研究了msm - upd的电学和光学性质。
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