Limitations of the displaced Maxwellian distribution for hot-electron transport in multi-valley semiconductors

Abstract

The multi-valley transport model using the displaced Maxwellian distribution (DMD) is applied to study hot-electron transport phenomena in a two-valley semiconductor in fast transient situations. It is shown that the DMD approach at high fields is inadequate. The velocity overshoot behavior given by this approach is less pronounced than the Monte Carlo results. Also, the DMD leads to relatively small mean energy and large average velocity at high fields.<>