Symmetrical 45nm PMOS on [110] substrate with excellent S/D extension distribution and mobility enhancement

Abstract

For the first time, 45 nm PMOS devices on the only 4-fold symmetry zone of [110] surface substrates were demonstrated with excellent diffusion control in the S/D extension region. A 30% drive current enhancement was observed compared to devices on conventional (100) substrates with <110> channel. Resistance to gate oxide interface generation induced by charge injection stress is increased by 2 times. Improved 1/f noise characteristics were also observed on [110] surface substrates, especially when devices operate at the linear region.