Fast methods for full-band mobility calculation

Abstract

Accurate band structure modeling is an essential ingredient in mobility modeling for any kind of semiconductor device or channel. This is particularly true for holes as the valence band of the most commonly used semiconductor materials is not even close to being parabolic. Instead, valence bands exhibit warped energy surfaces that simply cannot be approximated with parabolic valleys. To make matters worse, nanostructured channels can have large quantization energies resulting in complex, highly orientation-dependent kinetic behavior of both holes and electrons. In this work, we present an accurate and computationally efficient method for calculating channel low-feld mobilities based on a numeric band structure from a k·p model.