Ultrasonic Thick Wire Bonding Process Simulation and Validation for Silicon Carbide Power Devices

Pan Liu, Liangtao Li, Z. Zeng, Guoqi Zhang, Pengfei Liu, Jon Qingchun Zhang, Jing Zhang
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Abstract

Ultrasonic wire bonding is one of the critical challenges for power semiconductor manufacturing process, especially for silicon carbide (SiC) power devices. Packaging-related strain on the dies is one of the limiting factors for SiC devices scaling towards mass-production. Furthermore, due to the high current demand for SiC power device packaging, thick bond wires are often needed, which brings major challenges for the ultrasonic wire bonding process. Thus, computational simulation methods are under development to assist the wire bonding process. This paper presents a simulation method that can quickly narrow the process window for thick bond wires on SiC power devices beforehand. A process model was created to adapt process parameters of bonding force and power. This model aims to simulate the bond deformation for a discretized bonding area. Wire deformation and equivalent plastic strain were then examined and compared. The model was further validated through experiments. Experimental validation of the wire bonding model reveals a suitable deformation of bond wires, which helps to improve thick wire bonding reliability for power electronics packaging.
碳化硅功率器件超声粗线键合工艺仿真与验证
超声焊线是功率半导体,特别是碳化硅(SiC)功率器件制造工艺的关键挑战之一。封装相关的应变是SiC器件大规模生产的限制因素之一。此外,由于目前对SiC功率器件封装的需求很大,通常需要较粗的键合线,这给超声波线键合工艺带来了重大挑战。因此,计算模拟方法正在开发中,以辅助线键合过程。本文提出了一种模拟方法,可以提前快速缩小碳化硅功率器件上粗键合线的工艺窗口。根据粘接力和粘接功率的工艺参数,建立了工艺模型。该模型旨在模拟一个离散键合区域的键合变形。然后对钢丝变形和等效塑性应变进行了检测和比较。通过实验进一步验证了模型的正确性。通过对该模型的实验验证,发现了合适的键合线变形,有助于提高电力电子封装中粗线键合的可靠性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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