Fast Low Power 4 Transistor 4 Memristor Sense Amplifier

Bolin Zhang, Lei Li, Nan Pan, Shuo Li, Sen Gao
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Abstract

With the continuous improvement of performance such as speed, power consumption and area of microprocessors and System on Chip (SoC), transistor response speed and chip integration aggravate the fluctuation of transistor threshold voltage, which brings about the improvement of memory performance. Great challenge. Memristors improve the overall performance of integrated circuits due to the advantages of non-volatility, high speed and infinite endurance, and compatibility with CMOS integrated circuit technology. The delay time of the circuit is 20ps, the total circuit current is 124$\mu$A, the circuit power consumption is 2.976 fJ, and the output state reaches full swing. In this paper, a 4T4M sense amplifier is designed to improve the function of the sense amplifier circuit.
快速低功耗4晶体管4忆阻器感测放大器
随着微处理器和片上系统(SoC)的速度、功耗和面积等性能的不断提高,晶体管响应速度和芯片集成度加剧了晶体管阈值电压的波动,从而带来存储器性能的提高。巨大的挑战。忆阻器由于具有非易失性、高速和无限续航力等优点,并且与CMOS集成电路技术兼容,提高了集成电路的整体性能。电路的延时时间为20ps,电路总电流为124$\mu$A,电路功耗为2.976 fJ,输出状态达到满摆。本文设计了一种4T4M感测放大器,以改善感测放大电路的功能。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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