Modular extension of high performance SiGe BiCMOS technologies — Following the more-than-moore path

M. Kaynak, M. Wietstruck, C. Kaynak, S. Tolunay, A. Goritz, B. Tillack
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引用次数: 2

Abstract

This paper presents the modular extension of a BiCMOS technology. Three different modules, namely RF-MEMS switch, through-silicon-via (TSV) and microfluidics, are added to IHP's BiCMOS technologies. The first extension module of RF-MEMS switch adds a high-performance mechanical switch, providing unique features such as low-loss switching or high-Q tuning at mm-wave frequencies. The TSV module, which adds deep vias through the substrate (silicon), provides low-ohmic vias through the front side to back side of the silicon wafer. Using this module, the back side of the silicon chip can be used as the RF-ground. Furthermore, such vias through the substrate enables the 3D integrated packages. The last extension module, microfluidics, adds the micro-channels inside the BiCMOS chip. Such micro-channels are very promising for bio-sensing applications for THz detection. The brief technological information of each module and some design examples are also provided in this paper.
高性能SiGe BiCMOS技术的模块化扩展-遵循超过摩尔的路径
本文提出了一种BiCMOS技术的模块化扩展。三种不同的模块,即RF-MEMS开关,通硅通孔(TSV)和微流体,被添加到IHP的BiCMOS技术中。RF-MEMS开关的第一个扩展模块增加了一个高性能机械开关,提供了毫米波频率下的低损耗开关或高q调谐等独特功能。TSV模块通过衬底(硅)增加了深过孔,提供了从硅晶圆的正面到背面的低欧姆过孔。利用该模块,硅芯片背面可以作为射频地。此外,这种通过基板的通孔使3D集成封装成为可能。最后一个扩展模块是微流控,它在BiCMOS芯片内部增加了微通道。这种微通道在太赫兹探测的生物传感应用中非常有前景。文中还简要介绍了各模块的技术情况和设计实例。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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