Multi-frequencies Capacitively Coupled Discharge Simulation

Abstract

This article from the multiple frequencies capacitively coupled discharge in terms of the new method, provide a theoretical reference for the plasma simulation etching and a certain processing reference for semiconductor production. It is recommended that the percentage matching of voltage/frequency (400 V/6.0 MHz, 100 V/13.56 MHz, 200 V/27.0 MHz) be used. It is found that the occurrence of multiple peaks of ion density is approximately corresponding to the the integer period of high frequency. The peak time of ion kinetic energy appears nearby the low frequency period or nearby the low frequency half period. The results show that the time of ion density peak is controlled by the high frequency period and the time of ion average kinetic energy peak is controlled by the low frequency period.