Si Via Interconnection Technique with Thermal Budget Design

Abstract

The silicon-through-via structure that can withstand high thermal budget of MEMS process is suggested for stacked MEMS package. The doped silicon is used as through- via material instead of metal. The key ideas and design are described in detail. SDB (silicon direct bonding) multi-stacking process and metal reflow technique are used for through-via fabrication. Through-via arrays with 40mum and 50mum spacing are fabricated. Resistance of the fabricated via is measured. The thermal characteristics of the silicon through-via are under evaluation