Investigation of PVD HfO/sub 2/MIM capacitors for Si RF and mixed signal ICs application

Abstract

The electrical characteristics of high-/spl kappa/ PVD HfO/sub 2/ metal-insulator-metal (MIM) capacitors from IF (10 KHz) to RF (20 GHz) frequency range is investigated in this paper. High-/spl kappa/ HfO/sub 2/ dielectric with two thicknesses of 22 and 47 nm are fabricated, the respective capacitance densities are 7.3 and 3.5 fF//spl mu/m/sup 2/ and the two samples are denoted as HfO-1 to HfO-2. To investigate the capacitance characteristics of HfO/sub 2/ MIM capacitors in RF regime, the equivalent circuit model for capacitance is established. Thickness dependence of stress induced leakage currents (SILCs) for HfO/sub 2/ MIM capacitors is observed from J-V characteristics. For the C-V characteristics of HfO/sub 2/ MIM capacitors, the distortion of C-V curve after stress was reflected by the reduction of quadratic coefficients, exhibiting a flatten-out characteristic.