Charge-injection length in silicon nanocrystal memory cells

Abstract

We present the first experimental investigation of the lateral charge-injection length for silicon nanocrystal memory cells programmed with source-side injection (SSI). Charge-pumping measurements reveal that the injection length of SSI programming is reducible to 24 nm and suggest the possibility of scaling down the nanocrystal memory for 2-bit/cell operation to the 90-65-nm range of technology nodes.