A simulation study of single events in n/sup +/-p junctions

Abstract

In this work we present a simulation s t u 4 for single events in n’-p junctions. The s t u 4 investigates the variation of both the single-event induced current and the consequent collected charge with bias, substrate doping and minority carrier lifetime. We show that the minority carrier lifetime is the key factor in determining the amount of the total collected charge. We suggest that the reduction of the minority carrier lifetime in the substrate renders the device more immune against single events.