Improved thermal stability and device performance of ultra-thin (EOT<10 /spl Aring/) gate dielectric MOSFETs by using hafnium oxynitride (HfO/sub x/N/sub y/)

2002 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.01CH37303) Pub Date : 2002-06-11 DOI:10.1109/VLSIT.2002.1015427

C. Kang, H. Cho, K. Onishi, R. Choi, R. Nieh, S. Goplan, S. Krishnan, J.C. Lee

引用次数: 28

Abstract

Hafnium oxynitride (HfO/sub x/N/sub y/) film was prepared and characterized for gate dielectrics application with EOT<10 /spl Aring/ for the first time. Thermal stability and crystallization during the subsequent thermal process were improved significantly by using HfO/sub x/N/sub y/ over HfO/sub 2/. Furthermore, excellent transistor characteristics were obtained for both p and nMOSFETs.

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氮化铪(HfO/sub x/N/sub y/)改善超薄(EOT<10 /spl Aring/)栅极介电mosfet的热稳定性和器件性能

首次制备了EOT<10 /spl的氧化氮化铪(HfO/sub x/N/sub y/)薄膜，并对其进行了表征。与HfO/sub 2/相比，HfO/sub x/N/sub y/显著改善了后续热过程中的热稳定性和结晶性。此外，p型和nmosfet均获得了优异的晶体管特性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2002 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.01CH37303)

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