S. Kasai, Y. Shiratori, Kensuke Miura, Nan-Jian Wu
{"title":"Multi-path Switching Device Utilizing a Multi-terminal Nanowire Junction for MDD-Based Logic Circuit","authors":"S. Kasai, Y. Shiratori, Kensuke Miura, Nan-Jian Wu","doi":"10.1109/ISMVL.2009.43","DOIUrl":null,"url":null,"abstract":"Simple and compact multi-path switching devices for multi-valued decision diagram (MDD)-based logic circuits are designed, fabricated and characterized. The devices switch multiple exit branches for electrons entering from an entry branch, according to multi-valued input. The switching function is implemented by dual gating on multiple nanowires with different threshold voltages. The gate threshold voltage is controlled by precise design of gate structures and sizes in nanometer scale. The operation principle of the device is described using a simple analytical model. Ternary-path switching devices are demonstrated using AlGaAs/GaAs etched nanowire junctions together with nanometer-scale Schottky wrap gates (WPGs) and in-plane gates (IPGs).","PeriodicalId":115178,"journal":{"name":"2009 39th International Symposium on Multiple-Valued Logic","volume":"10 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2009-05-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2009 39th International Symposium on Multiple-Valued Logic","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISMVL.2009.43","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Simple and compact multi-path switching devices for multi-valued decision diagram (MDD)-based logic circuits are designed, fabricated and characterized. The devices switch multiple exit branches for electrons entering from an entry branch, according to multi-valued input. The switching function is implemented by dual gating on multiple nanowires with different threshold voltages. The gate threshold voltage is controlled by precise design of gate structures and sizes in nanometer scale. The operation principle of the device is described using a simple analytical model. Ternary-path switching devices are demonstrated using AlGaAs/GaAs etched nanowire junctions together with nanometer-scale Schottky wrap gates (WPGs) and in-plane gates (IPGs).