Influence of electrons reflected from target on operation of diode and triode electron sources

V. Engelko, V. Kuznetsov, G. Mueller, G. Viazmenova
{"title":"Influence of electrons reflected from target on operation of diode and triode electron sources","authors":"V. Engelko, V. Kuznetsov, G. Mueller, G. Viazmenova","doi":"10.1109/BEAMS.1998.822465","DOIUrl":null,"url":null,"abstract":"When an electron source and a target are immersed in an external magnetic field electrons reflected from a target do not disappear but move along magnetic force lines to the source region where they are rereflected back to the target by the source electric field. Penetration of reflected electrons into the source can lead to distortion of the source electric field and through this to change of the limiting current density emitted by a cathode. Results of calculations of the limiting current density in the diode and triode schemes of an electron source in the presence of reflected electrons are presented. Density of the space charge of reflected electrons was calculated taking into account their real energy distribution obtained by means of Monte Carlo simulation. It was found that penetration of reflected electrons in the diode can decrease essentially the limiting current density. When electrons are reflected with the same energy the maximum lowering of the current density is as much as 3 for reflection coefficient k=1 and 2 for k=0.5. Real lowering of the current density for tungsten target is 1.5. Results of calculations are in a good agreement with experimental data. The analysis performed shows that consideration of reflected electrons is necessary for correct calculation of the beam power density at the target and the distribution of the energy density deposited into the target.","PeriodicalId":410823,"journal":{"name":"12th International Conference on High-Power Particle Beams. BEAMS'98. Proceedings (Cat. No.98EX103)","volume":"31 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1998-06-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"12th International Conference on High-Power Particle Beams. BEAMS'98. Proceedings (Cat. No.98EX103)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/BEAMS.1998.822465","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
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Abstract

When an electron source and a target are immersed in an external magnetic field electrons reflected from a target do not disappear but move along magnetic force lines to the source region where they are rereflected back to the target by the source electric field. Penetration of reflected electrons into the source can lead to distortion of the source electric field and through this to change of the limiting current density emitted by a cathode. Results of calculations of the limiting current density in the diode and triode schemes of an electron source in the presence of reflected electrons are presented. Density of the space charge of reflected electrons was calculated taking into account their real energy distribution obtained by means of Monte Carlo simulation. It was found that penetration of reflected electrons in the diode can decrease essentially the limiting current density. When electrons are reflected with the same energy the maximum lowering of the current density is as much as 3 for reflection coefficient k=1 and 2 for k=0.5. Real lowering of the current density for tungsten target is 1.5. Results of calculations are in a good agreement with experimental data. The analysis performed shows that consideration of reflected electrons is necessary for correct calculation of the beam power density at the target and the distribution of the energy density deposited into the target.
目标反射电子对二极管和三极管电子源工作的影响
当电子源和目标都处于外加磁场中时,从目标反射的电子不会消失,而是沿着磁力线移动到源区域,在那里它们被源电场反射回目标。反射电子穿透到源中会导致源电场的畸变,从而改变阴极发射的极限电流密度。给出了有反射电子存在的电子源的二极管和三极管方案的极限电流密度的计算结果。根据蒙特卡罗模拟得到的实际能量分布,计算了反射电子的空间电荷密度。研究发现,反射电子在二极管内的渗透可以从本质上降低极限电流密度。当电子以相同能量反射时,当反射系数k=1时电流密度最大降低3,当反射系数k=0.5时电流密度最大降低2。钨靶电流密度的实际降低为1.5。计算结果与实验数据吻合较好。分析表明,要正确计算靶上的光束功率密度和靶上沉积的能量密度分布,必须考虑反射电子的影响。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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