Improved intermixing in GaAs/AlGaAs quantum well structures through repeated implant-anneal sequence

Abstract

Ion (proton) implantation was used to induce intermixing in GaAs/AlGaAs quantum wells. Very large energy shifts (up to 160 meV) were observed after annealing. However, the energy shift was further improved with a repeated implant-anneal sequence. Up to about a factor of two increase in the energy shifts were obtained. This sequence was then used to fabricate laser diodes for multi-wavelength device integration. A remarkable improvement in the laser threshold characteristics was obtained with this sequence compared to a single implant.