Trends of key advanced device technologies

B. C. Hwang
{"title":"Trends of key advanced device technologies","authors":"B. C. Hwang","doi":"10.1109/ARVLSI.1997.634847","DOIUrl":null,"url":null,"abstract":"Silicon CMOS technology has followed Moore's law over the past two decodes. It is still on the predicted curve, and it appears that the trend will continue into the next decade. The SIA roadmap published by Sematech in 1994 predicted the progress of semiconductor technology fairly well. Expectations based on the SIA roadmap are now being exceeded; for example, as announced by many companies, the projected 0.25 /spl mu/m production in 1998 will be met in 1997. Other technologies continue to make progress, along with silicon CMOS technology. The distinctive ones are Thin Film Silicon on insulator (TFSOI), Complementary Gallium Arsenide (CGaAs), and Graded-Channel CMOS (GCMOS). This paper will discuss the status, potential and hurdles of these technologies.","PeriodicalId":201675,"journal":{"name":"Proceedings Seventeenth Conference on Advanced Research in VLSI","volume":"17 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1997-09-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings Seventeenth Conference on Advanced Research in VLSI","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ARVLSI.1997.634847","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1

Abstract

Silicon CMOS technology has followed Moore's law over the past two decodes. It is still on the predicted curve, and it appears that the trend will continue into the next decade. The SIA roadmap published by Sematech in 1994 predicted the progress of semiconductor technology fairly well. Expectations based on the SIA roadmap are now being exceeded; for example, as announced by many companies, the projected 0.25 /spl mu/m production in 1998 will be met in 1997. Other technologies continue to make progress, along with silicon CMOS technology. The distinctive ones are Thin Film Silicon on insulator (TFSOI), Complementary Gallium Arsenide (CGaAs), and Graded-Channel CMOS (GCMOS). This paper will discuss the status, potential and hurdles of these technologies.
关键先进器件技术发展趋势
在过去的二十年里,硅CMOS技术一直遵循摩尔定律。它仍然在预测曲线上,似乎这种趋势将持续到下一个十年。Sematech于1994年发布的SIA路线图很好地预测了半导体技术的进步。基于SIA路线图的期望现在正在被超越;例如,正如许多公司宣布的那样,1998年预计的0.25 /spl亩/平方米的产量将在1997年实现。随着硅CMOS技术的发展,其他技术也在不断进步。它们的特点是薄膜硅绝缘体(TFSOI),互补砷化镓(CGaAs)和梯度通道CMOS (GCMOS)。本文将讨论这些技术的现状、潜力和障碍。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信