A new InP Schottky diode using a photo-CVD grown phosphorus-nitride film

Abstract

The enhancement of Schottky barrier height on InP substrate using a phosphorus nitride (P/sub 3/N/sub 5/) layer grown by a direct photo-CVD process with a gas mixture of PCl/sub 3/ and NH/sub 3/ was studied. An Au Schottky diode with a 50-AA intermediate layer showed a barrier height of 0.81 eV, an ideality factor of 1.08, and reverse leakage of 5.0*10/sup -8/ AA/cm/sup 2/ at 1 V voltage. The breakdown voltage was larger than 30 V. X-ray photoelectron spectra of the P/sub 3/N/sub 5//InP interfaces showed that the reduction of P-O-N compounds at the interface is responsible for the reduction of reverse leakage current and the enhancement of the barrier height.<>