A 12 GHz-band super low-noise amplifier using a self-aligned gate MESFET

Abstract

The design and fabrication of a 12-GHz-band, 4-stage, monolithic super-low-noise amplifier using self-aligned multilayer gate FETs is described. The device uses a self-aligned multilayer gate FET (SAMFET) with a LDD structure and a buried p-layer. The 0.3- mu m-gate FET used in the amplifier produces a typical noise figure of 1.07 dB with an associated gain of 9.0 dB at 12 GHz. The amplifier gives a minimum noise figure of 1.58 dB with a gain of 29 dB at 12 GHz: the noise figure is less than 1.76 dB with an associated gain as high as 28 dB in the frequency range from 11.7 to 12.7 GHz.<>