Simulation of Built-In Test Equipments based on Avalanche Noise Diodes: Ka-band LNA Case Study

2023 IEEE 23rd Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems Pub Date : 2023-01-22 DOI:10.1109/SiRF56960.2023.10046216

G. Simoncini, F. Alimenti

{"title":"Simulation of Built-In Test Equipments based on Avalanche Noise Diodes: Ka-band LNA Case Study","authors":"G. Simoncini, F. Alimenti","doi":"10.1109/SiRF56960.2023.10046216","DOIUrl":null,"url":null,"abstract":"Integrated noise sources are fundamental for precise gain and noise figure measurements in Built-In Test Equipments. In this paper a custom-developed, avalanche noise diode model is used in a commercial CAD software and applied to the input of a Ka-band Low Noise Amplifier for Built-In Self-Test purposes. Few noise diodes have been characterized in recent years, and among those whose models are available in the literature, the 20$\\mu m^{2}$ p-i-n diode developed with commercial 130-nm SiGe BiCMOS technology is considered. The diode is connected with an LNA realized in 130-nm SiGe BiCMOS IHP technology. Noise measurements are simulated to extract the noise figure and gain of the LNA. The extracted parameters are then compared with those autonomously simulated with the CAD. The obtained results show the importance of simulations in defining the theoretical limits of a noise BITE in ideal power measurements conditions. Moreover they present how the model can be successfully used to simulate a noise Built-In Test Equipment block for calibration purposes.","PeriodicalId":354948,"journal":{"name":"2023 IEEE 23rd Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems","volume":"33 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2023-01-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2023 IEEE 23rd Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SiRF56960.2023.10046216","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 1

Abstract

Integrated noise sources are fundamental for precise gain and noise figure measurements in Built-In Test Equipments. In this paper a custom-developed, avalanche noise diode model is used in a commercial CAD software and applied to the input of a Ka-band Low Noise Amplifier for Built-In Self-Test purposes. Few noise diodes have been characterized in recent years, and among those whose models are available in the literature, the 20$\mu m^{2}$ p-i-n diode developed with commercial 130-nm SiGe BiCMOS technology is considered. The diode is connected with an LNA realized in 130-nm SiGe BiCMOS IHP technology. Noise measurements are simulated to extract the noise figure and gain of the LNA. The extracted parameters are then compared with those autonomously simulated with the CAD. The obtained results show the importance of simulations in defining the theoretical limits of a noise BITE in ideal power measurements conditions. Moreover they present how the model can be successfully used to simulate a noise Built-In Test Equipment block for calibration purposes.

查看原文本刊更多论文

基于雪崩噪声二极管的内置测试设备仿真:ka波段LNA实例研究

集成噪声源是内置测试设备中精确测量增益和噪声系数的基础。本文在商业CAD软件中使用定制开发的雪崩噪声二极管模型，并将其应用于用于内置自检目的的ka波段低噪声放大器的输入。近年来，噪声二极管的特性很少，在文献中可用的模型中，考虑了采用商用130纳米SiGe BiCMOS技术开发的20$\mu m^{2}$ p-i-n二极管。该二极管与采用130纳米SiGe BiCMOS IHP技术实现的LNA相连。对噪声测量进行了仿真，提取了LNA的噪声系数和增益。然后将提取的参数与CAD自主模拟的参数进行比较。所得结果表明，在理想功率测量条件下，仿真对于确定噪声咬合的理论极限具有重要意义。此外，他们还介绍了该模型如何成功地用于模拟用于校准目的的噪声内置测试设备块。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文求助全文

来源期刊

2023 IEEE 23rd Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems

自引率

0.00%

发文量