Investigation and analysis into device optimization for attaining efficiencies in-excess of 90% when accounting for higher harmonics

A. L. Clarke, Muhammad Akmal, J. Lees, P. Tasker, J. Benedikt
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引用次数: 13

Abstract

A rigorous, systematic, measurement-founded approach is presented that enables the design of highly efficient power amplifiers. The identified process allows the designer to quickly identify the parameters necessary for completion of a design whilst ascertaining their flexibility and impact on performance degradation. The investigation continues to consider the impact of the higher harmonics and gate bias as design tools on the performance of the design and proposes a strategy that utilizes their positive effect as well as considering the subsequent impact on device scaling. This was carried out on GaAs pHEMT devices from commercial processes that obtained measured peak efficiencies of 90.1% at P1dB in a class-B bias.
对器件优化进行调查和分析,以在考虑高谐波时实现超过90%的效率
提出了一种严谨、系统、基于测量的方法,使高效功率放大器的设计成为可能。确定的过程允许设计师快速确定完成设计所需的参数,同时确定其灵活性和对性能下降的影响。本研究继续考虑高次谐波和栅极偏置作为设计工具对设计性能的影响,并提出了一种利用其积极影响以及考虑后续对器件缩放影响的策略。这是在来自商业工艺的GaAs pHEMT器件上进行的,在b类偏置的P1dB下获得了90.1%的测量峰值效率。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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