Monolithically Integrated Opto-Electrical NOR Gate Using Light Emitting Transistors

Abstract

We develop an opto-electrical NOR gate, using Light-Emitting Transistors (LET) on GaAs substrate by the monolithically integrated fabrication. By dual-input and dual-output (electrical and optical) characteristics, it can be applied to Opto-Electrical Integrated Circuits (OEICs).