Peculiarities of recharging process Yb2+ → Yb3+ in Yb:Y3Al5O12 epitaxial films under high temperature oxidation

International Conference on Oxide Materials for Electronic Engineering - fabrication, properties and applications (OMEE-2014) Pub Date : 2014-05-26 DOI:10.1109/OMEE.2014.6912387

N. Martynyuk, O. Buryy, S. Ubizskii, I. Syvorotka, K. Becker

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Abstract

In this communication we analyze the reasons for distinctions of Yb²⁺ → Yb³⁺ recharging processes taking place in Yb:Y₃Al₅O₁₂ epitaxial films and bulk crystals under high temperature annealing. Influence of sample surface structure on the rate of oxidation process was found to be significant.

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高温氧化下Yb:Y3Al5O12外延膜Yb2+→Yb3+再充电过程的特性

本文分析了高温退火下Yb:Y3Al5O12外延薄膜和体晶中Yb2+→Yb3+再充电过程差异的原因。样品表面结构对氧化过程速率的影响是显著的。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

International Conference on Oxide Materials for Electronic Engineering - fabrication, properties and applications (OMEE-2014)

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