{"title":"Design, Simulation & Analysis of Si, SOI & Carbon Nanotube (CNT) based Micro Piezoresistive Pressure Sensor for a High Tmeperature & Pressure","authors":"Kirankumar B. Balavalad, B. G. Sheeparamatti","doi":"10.1109/ICCSDET.2018.8821104","DOIUrl":null,"url":null,"abstract":"The paper, presents the design and analysis of micro piezoresistive pressure sensors using Si, SOI & CNT (Carbon Nanotube) for harsh environment. The sensors were analyzed for the important parameters like sensitivity and temperature sensitivity. Pressure range of 0 to 1MPa, over which the sensors behave linear is considered for analysis. Results reveal that the micro pressure sensor using CNT as piezoresistor has better sensitivity of 308.7mV/MPa (30.8mV/bar), which is better than the sensitivities obtained for silicon & SOI based sensors. CNT is considered as piezoresistor in the design of micro pressure sensor, because of its high gauge factor and an excellent piezoresistive property compared to Si & SOI based sensors. High temperature analysis, depict that CNT & SOI pressure sensors can be used for high temperature applications, with better sensitivity over a linear range.","PeriodicalId":157362,"journal":{"name":"2018 International Conference on Circuits and Systems in Digital Enterprise Technology (ICCSDET)","volume":"141 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 International Conference on Circuits and Systems in Digital Enterprise Technology (ICCSDET)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICCSDET.2018.8821104","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
The paper, presents the design and analysis of micro piezoresistive pressure sensors using Si, SOI & CNT (Carbon Nanotube) for harsh environment. The sensors were analyzed for the important parameters like sensitivity and temperature sensitivity. Pressure range of 0 to 1MPa, over which the sensors behave linear is considered for analysis. Results reveal that the micro pressure sensor using CNT as piezoresistor has better sensitivity of 308.7mV/MPa (30.8mV/bar), which is better than the sensitivities obtained for silicon & SOI based sensors. CNT is considered as piezoresistor in the design of micro pressure sensor, because of its high gauge factor and an excellent piezoresistive property compared to Si & SOI based sensors. High temperature analysis, depict that CNT & SOI pressure sensors can be used for high temperature applications, with better sensitivity over a linear range.