Design, Simulation & Analysis of Si, SOI & Carbon Nanotube (CNT) based Micro Piezoresistive Pressure Sensor for a High Tmeperature & Pressure

Kirankumar B. Balavalad, B. G. Sheeparamatti
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引用次数: 2

Abstract

The paper, presents the design and analysis of micro piezoresistive pressure sensors using Si, SOI & CNT (Carbon Nanotube) for harsh environment. The sensors were analyzed for the important parameters like sensitivity and temperature sensitivity. Pressure range of 0 to 1MPa, over which the sensors behave linear is considered for analysis. Results reveal that the micro pressure sensor using CNT as piezoresistor has better sensitivity of 308.7mV/MPa (30.8mV/bar), which is better than the sensitivities obtained for silicon & SOI based sensors. CNT is considered as piezoresistor in the design of micro pressure sensor, because of its high gauge factor and an excellent piezoresistive property compared to Si & SOI based sensors. High temperature analysis, depict that CNT & SOI pressure sensors can be used for high temperature applications, with better sensitivity over a linear range.
基于Si, SOI和碳纳米管(CNT)的高温高压微压阻压力传感器的设计,仿真和分析
本文介绍了用于恶劣环境的硅、SOI和碳纳米管微压阻式压力传感器的设计与分析。对传感器的重要参数如灵敏度和温度灵敏度进行了分析。压力范围为0至1MPa,在此范围内,传感器的线性行为被考虑用于分析。结果表明,采用碳纳米管作为压敏电阻的微压力传感器灵敏度为308.7mV/MPa (30.8mV/bar),优于硅基和SOI基传感器的灵敏度。由于碳纳米管具有较高的测量系数和相对于硅基和SOI基传感器优异的压阻性能,因此在微压力传感器的设计中被认为是一种压阻器件。高温分析,描述了碳纳米管和SOI压力传感器可用于高温应用,在线性范围内具有更好的灵敏度。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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