CBE Growth Of Lattice Matched And Strained GalnaA(P)/InP Quantum Wells And DBRs

Abstract

Coherently grown G a x In1 x As ternary compounds have been drawing increasing attention in the area of high performance optical devices[ll. Recently, AlGaAs/GaAs surface emitting (SE) lasers with a GaInAs strained active-layer and semiconductor DBRS have exhibited outstanding performances[2]. This pseudoinorphic material grown onto I@ can also promise to improve the long wavelength (1.3 to 1.55~) SE lasers. It is then crucial to find a versatile growth technique to attain such laser devices since both ultrathin layer growth and high speed growth must be accomplished at the same time. Chemical beam epitaxy (CBE) is one of the most promising technologies for attaining these sophisticated multilayer heterostructures[3]. Extremely high doping, which is important for future optoelectronic device integration, has also been proven to be possible by CBE[4]. Here, we review our recent progress in multi-layer growth using CBE. A two-chamber RIBER CBE-32 is employed for the experiments. For group I11 sources, triethylgallium (TEG) and trimethylindium (TMI) were used with hydrogen carrier gas. For group V elements, arsine (Ash ) and phosphine (rJH3) were thermally decomposed by our original cracking