Effect of parasitic resistance on mobility in laser crystallized LT poly-Si TFTs

Proceedings of 5th Asian Symposium on Information Display. ASID '99 (IEEE Cat. No.99EX291) Pub Date : 1999-03-19 DOI:10.1109/ASID.1999.762765

Shih-chang Chang, Chung‐Chih Wu, I. Lu, Y. Chen

引用次数: 3

Abstract

Effect of parasitic resistance (Rp) on the mobility in laser-crystallized low-temperature (LT) poly-Si thin film transistors (TFTs) of various channel lengths was investigated The minimum off current at Vd=10 V in these TFTs is scalable and is about 0.15 pA//spl mu/m. Significant reduction of mobility was observed in short channel devices due to parasitic resistance. Based on our analysis of the Rp requirement for high-performance short-channel LT poly-Si TFTs, to avoid significant degradation in the mobility for the mobility larger than 300 cm/sup 2//Vs, it is necessary to keep Rp below 200 ohm.

查看原文本刊更多论文

寄生电阻对激光结晶LT多晶硅tft迁移率的影响

研究了不同通道长度激光结晶低温(LT)多晶硅薄膜晶体管(TFTs)中寄生电阻(Rp)对迁移率的影响。这些晶体管在Vd=10 V时的最小关断电流是可扩展的，约为0.15 pA//spl mu/m。由于寄生电阻，在短通道器件中观察到显著的迁移率降低。根据我们对高性能短通道LT多晶硅tft的Rp要求的分析，为了避免迁移率大于300 cm/sup 2//Vs时迁移率的显著下降，有必要将Rp保持在200 ohm以下。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文求助全文

来源期刊

Proceedings of 5th Asian Symposium on Information Display. ASID '99 (IEEE Cat. No.99EX291)

自引率

0.00%

发文量