Design considerations for a CMOS 65-nm RTN-based PUF

Eros Camacho-Ruiz, F. J. Rubio-Barbero, R. Castro-López, E. Roca, F. Fernández
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Abstract

Physical Unclonable Functions (PUFs) have emerged as more secure alternatives to traditional Non-Volatile Memories in the field of hardware security. Recently, a novel PUF has been presented that uses the Random Telegraph Noise (RTN) phenomenon as the underlying source of entropy. To turn this concept into an integrated circuit, this paper provides a description of the transistor-level implementation of the PUF as well as a discussion on the constraints and requirements (both in functionality and testing capability) that a silicon implementation brings about. More specifically, the paper explores how to design and physically arrange the core elements of the RTN-PUF to efficiently use the silicon area and attain low PUF response times after a challenge is given.
CMOS 65nm rtn型PUF的设计考虑
物理不可克隆功能(puf)已成为传统非易失性存储器在硬件安全领域更安全的替代品。最近,一种新的PUF被提出,它使用随机电报噪声(RTN)现象作为潜在的熵源。为了将这一概念转化为集成电路,本文提供了对晶体管级PUF实现的描述,并讨论了硅实现带来的约束和要求(功能和测试能力)。更具体地说,本文探讨了如何设计和物理布置RTN-PUF的核心元件,以有效地利用硅面积,并在给定挑战后实现低PUF响应时间。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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