Impactful Study of a Counter-doped Pocket on a Charge Plasma Tunnel FET Biosensor

Abstract

In this paper, the importance of a counter-doped pocket is studied for the sensitivity and performance of a charge-plasma-based Tunnel FET (TFET) biosensor. A Si(1-x) Ge(x) pocket is utilized under the nanoscale cavity region to improve the electrical parameters of the proposed TFET biosensor. The Germanium content is varied and optimized to 35% for improved overall sensitivity in terms of threshold voltage (Vth) and on-current (Ion). It has been shown in this paper that a doped pocket composed of strained material has a significant effect on Ion and Vth variations near the sourcechannel interface which commands the basic operation of TFET biosensor. A maximum Vth sensitivity of 553.7 mV and on-current sensitivity of 1.24×102 is attained in this work which makes the proposed device an effective prospect for biosensing applications.