A 2 GHz 12-bit digital-to-analog converter for direct digital synthesis applications

T. Schaffer, H.P. Warren, M. J. Bustamante, K. Kong
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引用次数: 16

Abstract

A 2 GHz 12-bit digital-to-analog converter (DAC) designed for use in a Direct Digital Synthesizer was demonstrated with spurious performance exceeding -60 dBc when synthesizing 1/8th of a 1 GHz clock. This exceeds the best documented results of which we are aware by more than 15 dB at this clock rate and fractional frequency. When synthesizing near 1/3rd the clock rate the carrier-adjacent spurious performance exceeds -58 dBc at a 1 GHz clock rate, exceeding the 500 MHz clock rate performance of other DACs we have evaluated by 5-10 dB. Although designed to operate well above 2 GHz, state-of-the-art test equipment limited full characterization of the device to a 1 GHz clock rate at the time of evaluation. Unlike that observed with other DACs, nearly constant measured performance versus clock rate up to 1 GHz promises sustained performance at higher clock rates. The 12 bit DAC architecture consists of the 3 most significant bits driving 7 equally weighted current segments while the remaining 9 bits drive identical current segments combined through a binary R2R ladder. This architecture represents the best tradeoff between performance considerations and circuit complexity. The primary focus on this first design iteration was on achieving good spurious performance with less emphasis on power dissipation and on providing key information for a subsequent design optimization. The DAC was fabricated using an integrated circuit process developed at Hughes Research Laboratories and consists of 1200 AlInAs/GaInAs HBTs lattice matched to an InP substrate. The smallest InP-based HBTs utilized emitters having 2/spl times/2 sq. micron emitters with Ft=75 GHz and Fmax=85 GHz. The high speed DAC dissipated 2.8 W.
用于直接数字合成应用的2 GHz 12位数模转换器
设计用于直接数字合成器的2 GHz 12位数模转换器(DAC)在合成1/8 GHz时钟时的杂散性能超过-60 dBc。在此时钟速率和分数频率下,这超过了我们所知道的最佳记录结果15 dB以上。当合成接近1/3时钟速率时,在1 GHz时钟速率下,载波相邻杂散性能超过-58 dBc,比我们评估的其他dac的500 MHz时钟速率性能高出5-10 dB。尽管设计工作频率远高于2ghz,但在评估时,最先进的测试设备将器件的完整特性限制在1ghz时钟频率。与观察到的其他dac不同,在高达1 GHz的时钟速率下,几乎恒定的测量性能保证了在更高时钟速率下的持续性能。12位DAC架构由3位最高位驱动7个等加权电流段,而其余9位驱动通过二进制R2R阶梯组合的相同电流段。这种架构代表了性能考虑和电路复杂性之间的最佳权衡。第一次设计迭代的主要重点是实现良好的伪性能,而不是强调功耗和为后续设计优化提供关键信息。DAC采用休斯研究实验室开发的集成电路工艺制造,由1200个与InP衬底匹配的AlInAs/GaInAs HBTs晶格组成。最小的基于inp的hbt使用的发射器具有2/ sp1乘以/2平方。Ft=75 GHz, Fmax=85 GHz的微米发射器。高速DAC的功耗为2.8 W。
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