Operation Of a p-channel, GaAs/(In,Ga)As, Strained Quantum Well Field-effect Transistor At 4 K

Abstract

Structural and environmental factors affecting strain-induced light-hole conduction in GaAs/(In,Ga)As/GaAs, strained quantum well field-effect transistors (SQWFETs) are reviewed. Important parameters are biaxial compression, valence band nonparabolicity, two dimensional hole concentration, and temperature. To examine the effects of temperature on transistor performance, a p-channel SQWFET with a 3.5 um Cr/Au gate was fabricated from a modulation-doped GaAs/In0.2Ga0.8As/GaAs quantum well structure. Well-behaved transistor action and high transconductances were observed from 300 to 4 K.