Simulation of large-signal behavior of a GaAs low noise amplifier

Abstract

This paper investigates the linearity of a GaAs MESFET amplifier. A two-stage low noise amplifier is analyzed by PSPICE. The large-signal S parameters are determined for different load conditions, i.e. a resistive load, an active self-biased load and a cascode configuration. Additionally, the linearity is described in terms of two-tone intermodulation products of the 3/sup rd/ and 5/sup th/ order, as well as the 3/sup rd/ order intercept point (IP/sub 3/).