A DC-18 GHz GaAs MESFET monolithic variable slope gain-equalizer IC

Digest of Papers.,Microwave and Millimeter-Wave Monolithic Circuits Symposium Pub Date : 1989-06-12 DOI:10.1109/MCS.1989.37267

H.J. Sun, B. Morley

引用次数: 8

Abstract

The design, fabrication and measured performance are presented for a DC-18 GHz GaAs MESFET monolithic variable-slope gain-equalizer IC. The IC design uses a modified bridged-T configuration using two GaAs MESFETs. This provides an attenuation slope of -0.67 dB/GHz at the maximum linear slope state with a minimum insertion loss of 2.7 dB at 18 GHz and a deviation of linearity less than 0.25 dB from DC to 18 GHz. The slope is electrically variable from -0.67 to +0.22 dB/GHz. The input and output VSWRs are less than 2:1 over the entire frequency and control range.<>

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dc - 18ghz GaAs MESFET单片变斜率增益均衡器集成电路

介绍了DC-18 GHz GaAs MESFET单片变斜率增益均衡器IC的设计、制造和测量性能。该IC设计采用改进的桥接t结构，采用两个GaAs MESFET。在最大线性斜率状态下，衰减斜率为-0.67 dB/GHz，在18 GHz时最小插入损耗为2.7 dB，从DC到18 GHz的线性偏差小于0.25 dB。斜率在-0.67到+0.22 dB/GHz的电范围内变化。在整个频率和控制范围内，输入输出VSWRs小于2:1

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Digest of Papers.,Microwave and Millimeter-Wave Monolithic Circuits Symposium

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