Microwave FET Oscillator Design Based on Large-Signal Characterisation

Abstract

A method of accurately designing microwave FET oscillators using a two terminal large-signal characterisation technique is described. Measurements are used to characterise a one-port microwave oscillator circuit in terms of admittance, frequency and signal level, with the FET embedded in a feedback network. Device surfaces are used in the optimal design of low noise FET oscillators. The technique is applied to several microstrip MESFET oscillator circuits.