Monte Carlo simulation of wide AlGaAs barriers

Abstract

An theoretical study has been made of electron transport over a wide AlGaAs barrier with graded interfaces between GaAs contact layers doped at 1/spl times/10/sup 18/ cm/sup -3/. Drift diffusion theory has been used giving excellent agreement with experimental current-voltage curves over the temperature range 100-200 K. We also present a fully self consistent 1-D Monte Carlo simulation in which the change in alloy composition in the graded interfaces is accounted for by position dependent scattering. We present a method used in the Monte Carlo simulation which allowed the modelling of the heavily doped contact regions even though the electron density could change by up to 8 orders of magnitude in the device.<>