Dual-threshold independent-gate N-type TFETs

Abstract

In this paper, we introduce novel dual-threshold (DT) independent gate (IG) N-type Tunneling Field-effect Transistor (TFET) devices that can reduce the number of transistors used in circuit designs. We optimize the leakage currents by varying gate-on-drain overlapping based on typical symmetrical dual-gate structures, and then achieve high-Vth and low-Vth IG transistors by adjusting gate work function. TCAD simulation results show high-Vth and low-Vth IG N-type TFETs are logically equivalent to two short-gate (SG) transistors in series and parallel, respectively, with excellent electrical characteristics.