The l/f noise characteristics of a Schottky Junction Transistor: an ultra-low power, radiation hardened sub-threshold MESFET

Abstract

This paper is concerned with the 1/f noise characteristics of a new sub-threshold device configuration, the Schottky junction transistor (SJT). Results from 2 mum gate length SJTs confirm the expected sub-threshold d.c. behavior. Room temperature measurements of the drain current noise power spectrum and the gate referred noise power spectrum are presented. Although still not optimized the prototype SJTs demonstrate good low-frequency 1/f noise characteristics